The absorption spectrum of 4H-SiC.

Download scientific diagram | The absorption spectrum of 4H-SiC. from publication: Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser | The physical properties of silicon carbide (SiC) are excellent as a third-generation semiconductor. Nevertheless, diamond wire cutting has many drawbacks, including high loss, long cutting time and prolonged processing time. The study of 4H-SiC wafer slicing by using an | Ultrafast Lasers, Silicon Carbide and Laser | ResearchGate, the professional network for scientists.

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Absorption spectra of four selected 4H-SiC samples measured at room

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Low temperature photoluminescence spectrum of 4H-SiC displaying the ZPL

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The absorption spectrum of 4H-SiC.

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